| PART |
Description |
Maker |
| MTN2N70I3 |
N-Channel Enhancement Mode Power MOSF
|
Cystech Electonics Corp.
|
| UPA2717GR UPA2717GR-A |
15 A, 30 V, 0.0104 ohm, P-CHANNEL, Si, POWER, MOSFET
SWITCHING N- AND P-CHANNEL POWER MOS FET
SWITCHING P-CHANNEL POWER MOSFET
|
NEC[NEC]
|
| RJM0306JSP-00-J0 RJM0306JSP10 |
Silicon N / P Channel Power MOS FET High Speed Power Switching
3.5 A, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, SOP-8
|
Renesas Electronics Corporation
|
| HAT1093C-EL-E HAT1095C-EL-E HAT1095C HAT1093C |
2000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Silicon P Channel MOSFET Power Switching
Silicon P Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
| UPA2756GR |
SWITCHING N-CHANNEL POWER MOSFET
SWITCHING N- AND P-CHANNEL POWER MOS FET
|
NEC[NEC]
|
| UPA2710GR |
SWITCHING N- AND P-CHANNEL POWER MOS FET
SWITCHING P-CHANNEL POWER MOSFET
|
NEC
|
| UPA2701TP |
SWITCHING N- AND P-CHANNEL POWER MOS FET
SWITCHING N-CHANNEL POWER MOSFET
|
NEC
|
| GT15Q101 E001909 |
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
|
http://
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| RJK0364DPA RJK0364DPA-00-J0 |
35 A, 30 V, 0.0112 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| HAT2165H-EL-E HAT2165H-15 |
55 A, 30 V, 0.0053 ohm, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET Power Switching
Old Company Name in Catalogs and Other Documents
|
Renesas Electronics Corporation
|
